unisonic technologies co., ltd 4n65k power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2012 unisonic technologies co., ltd qw-r502-840.a 4 a , 650v n-channel power mosfet ? description the utc 4n65k is a high voltage power mosfet designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. this power mosfet is usually used in high speed switching applications including power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) = 2.5 ? @v gs = 10 v * ultra low gate charge ( typical 15 nc ) * low reverse transfer capacitance ( c rss = typical 8.0 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4N65KL-TF3-T 4n65kg-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
4n65k power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-840.a ? absolute maximum ratings (t c = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v avalanche current (note2) i ar 4.4 a drain current continuous i d 4.0 a pulsed (note2) i dm 16 a avalanche energy single pulsed (note3) e as 110 mj repetitive (note2) e ar 10.6 mj peak diode recovery dv/dt (note4) dv/dt 4.5 v/ns power dissipation p d 106 w junction temperature t j +150 operating temperature t opr -55 ~ +150 storage temperature t stg -55 ~ +150 note: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 30mh, i as = 4a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 4.4a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 /w junction to case jc 1.18 /w
4n65k power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-840.a ? electrical characteristics (t c =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 650 v drain-source leakage current i dss v ds = 650 v, v gs = 0 v 10 a gate-source leakage current forward i gss v gs = 30 v, v ds = 0 v 100 na reverse v gs = -30 v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 0.6 v/ on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10 v, i d = 2.2a 2.4 2.5 ? dynamic characteristics input capacitance c iss v ds = 25 v, v gs = 0v, f = 1mhz 520 670 pf output capacitance c oss 70 90 pf reverse transfer capacitance c rss 8 11 pf switching characteristics turn-on delay time t d ( on ) v dd = 325v, i d = 4.0a, r g = 25 ? (note 1, 2) 13 35 ns turn-on rise time t r 70 100 ns turn-off delay time t d ( off ) 25 60 ns turn-off fall time t f 100 120 ns total gate charge q g v ds = 520v,i d = 4.0a, v gs = 10v (note 1, 2) 15 20 nc gate-source charge q gs 3.4 nc gate-drain charge q gd 7.1 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s = 4.4a 1.4 v maximum continuous drain-source diode forward current i s 4.4 a maximum pulsed drain-source diode forward current i sm 17.6 a reverse recovery time t r r v gs = 0v, i s = 4.4a, di f /dt = 100 a/ s (note 1) 250 ns reverse recovery charge q rr 1.5 c note: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
4n65k power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-840.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
4n65k power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-840.a ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l v dd pulse width 1 s duty factor 0.1% switching test circuit switching waveforms gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
4n65k power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-840.a ? typical characteristics -100 drain-source breakdown voltage, bv dss (normalized) (v) junction temperature, t j ( ) -50 50 200 100 150 1.2 0 1.1 1.0 0.9 0.8 note: 1. v gs =0v 2. i d =250a breakdown voltage variation vs. temperature -100 drain-source on-resistance, r ds(on) (normalized) ( ? ) junction temperature, t j ( ) -50 50 200 100 150 3.0 0 2.0 1.0 0.5 0.0 1.5 2.5 on-resistance junction temperature note: 1. v gs =10v 2. i d =4a 10 1 10 0.1 1 drain-to-source voltage, v ds (v) on-state characteristics 0.1 2 gate-source voltage, v gs (v) transfer characteristics 46 810 150 notes: 1. v ds =50v 2. 250s pulse test 10 1 0.1 25 5.0v notes: 1. 250s pulse test 2. t c =25 v gs top: 10v 9v 8v 7v 6v 5.5v 5 v bottorm:5.0v
4n65k power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-840.a ? typical characteristics(cont.) 1200 0 0.1 drain-sourcevoltage, v ds (v) 1000 200 110 c iss 800 600 notes: 1. v gs =0v 2. f = 1mhz c iss= c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance characteristics (non-repetitive) 0 total gate charge, q g (nc) 5 15 25 note: i d =4a 8 10 12 10 6 4 2 0 v ds =120v v ds =300v v ds =480v 20 gate charge characteristics c oss c rss 400 thermal response, jc (t) p d (w)
4n65k power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-840.a utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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